Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm (2016)
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: TRANSISTORES, SENSORES QUÍMICOS, FOTOLITOGRAFIA
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VIEIRA, N. C. S. et al. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm. Journal of Physics: Condensed Matter, v. 28, n. 8, p. 085302-1-085302-9, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/8/085302. Acesso em: 15 maio 2024.APA
Vieira, N. C. S., Borme, J., Machado Junior, G., Cerqueira, F., Freitas, P. P., Zucolotto, V., et al. (2016). Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm. Journal of Physics: Condensed Matter, 28( 8), 085302-1-085302-9. doi:10.1088/0953-8984/28/8/085302NLM
Vieira NCS, Borme J, Machado Junior G, Cerqueira F, Freitas PP, Zucolotto V, Peres NMR, Alpuim P. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 8): 085302-1-085302-9.[citado 2024 maio 15 ] Available from: https://doi.org/10.1088/0953-8984/28/8/085302Vancouver
Vieira NCS, Borme J, Machado Junior G, Cerqueira F, Freitas PP, Zucolotto V, Peres NMR, Alpuim P. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 8): 085302-1-085302-9.[citado 2024 maio 15 ] Available from: https://doi.org/10.1088/0953-8984/28/8/085302
